Indirect excitons in strained GaxIn1-xAs/InP quantum wells

E-ISSN： 1764-7177|03|C5|C5-269-C5-272

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.03, Iss.C5, 1993-10, pp. : C5-269-C5-272

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Investigation of strained In_xGa_1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy

By Bondarev A. Vinokurov D. Kapitonov V. Kovalenkov O. Sokolova Z. Tarasov I.

Technical Physics Letters, Vol. 24, Iss. 11, 1998-11 ,pp. : 886-887

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Photoluminescence and dark current of p-doped InGaAs/Al x Ga 1- x As strained multiple quantum wells

By Zhang D.H. Yoon S.F. Radhakrishnan K. Han Z.Y.

Superlattices and Microstructures, Vol. 20, Iss. 1, 1996-01 ,pp. : 105-110

Academic Press

Access to resources Recommend Favorite

ELECTRIC FIELD EFFECTS ON EXCITONS IN Alx Ga1-x As QUANTUM WELLS AND THEIR APPLICATIONS TO OPTOELECTRONIC DEVICES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-85-C5-92

Edp Sciences

Access to resources Recommend Favorite

Electronic structures of the zinc-blende GaN/Ga 1- x Al x N compressively strained superlattices and quantum wells

By Fan W.J. Li M.F. Chong T.C. Xia J.B.

Superlattices and Microstructures, Vol. 19, Iss. 4, 1996-04 ,pp. : 251-261

Academic Press

Access to resources Recommend Favorite

Spin relaxation of excitons in strained InGaAs/GaAs quantum wells

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-351-C5-354

Edp Sciences

Access to resources Recommend Favorite