Nickel Thin Films Grown by MOCVD Using Ni(dmg)2 as Precursor

E-ISSN： 1764-7177|05|C5|C5-465-C5-472

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.05, Iss.C5, 1995-06, pp. : C5-465-C5-472

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursor

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-791-Pr8-798

Edp Sciences

Access to resources Recommend Favorite

MOCVD of SnO2 thin films from a new organometallic precursor

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-667-Pr8-673

Edp Sciences

Access to resources Recommend Favorite

RAMAN SPECTROSCOPY CHARACTERIZATION OF POLYCRYSTALLINE GaP THIN FILMS GROWN BY MO-CVD PROCESS USING [Et2Ga - PEt2]3 AS ONLY SOURCE

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-347-C1-352

Edp Sciences

Access to resources Recommend Favorite

Growth mechanisms of MOCVD processed Ni thin films

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-57-Pr8-64

Edp Sciences

Access to resources Recommend Favorite

X-ray spectroscopic examination of thin HfO₂ films ALD- and MOCVD-grown on the Si(100) surface

By Sokolov A. Ovchinnikov A. Lysenkov K. Marchenko D. Filatova E.

Technical Physics, Vol. 55, Iss. 7, 2010-07 ,pp. : 1045-1050

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite