On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates

Publisher： Edp Sciences

E-ISSN： 1764-7177|05|C5|C5-663-C5-670

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.05, Iss.C5, 1995-06, pp. : C5-663-C5-670

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Heat treatment effect on p type Zn doped InP substrates

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 10, 1987-10 ,pp. : 1159-1168

Edp Sciences

Access to resources Recommend Favorite

The rôle of plasma oxide in InP MIS structures

By  

Revue de Physique Appliquée (Paris), Vol. 19, Iss. 2, 1984-02 ,pp. : 155-159

Edp Sciences

Access to resources Recommend Favorite

THERMODYNAMIC STUDIES OF THE SILICON TRANSPORT IN LPE GROWTH ON InP SUBSTRATES

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-357-C5-375

Edp Sciences

Access to resources Recommend Favorite

OBSERVATIONS ON THE GROWTH OF GOOD SURFACE QUALITY, HIGH MOBILITY EPITAXIAL LAYERS OF InP BY THE In-PCl3-H2 TECHNIQUE

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-433-C5-443

Edp Sciences

Access to resources Recommend Favorite

Caractérisation physico-chimique et électrique de structures fluorure — semi-conducteur III-V (passivation de GaAs et InP)

By  

Revue de Physique Appliquée (Paris), Vol. 23, Iss. 1, 1988-01 ,pp. : 63-70

Edp Sciences

Access to resources Recommend Favorite