Publisher: Edp Sciences
E-ISSN: 1764-7177|06|C3|C3-231-C3-236
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-231-C3-236
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
GaAs JFETs intended for deep cryogenic VLWIR readout electronics
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :
Advances in discrete GaAs JFETs and simple amplifiers for deep cryogenic readouts
Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. :
Development of cryogenic Ge JFETs
Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. :
Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation
By Xue-Feng Zhang Li Wang Jie Liu Lai Wei Jian Xu
Chinese Physics B, Vol. 22, Iss. 1, 2013-01 ,pp. :
GaAs MESFETs and monolithic circuits in cryogenic environments
Le Journal de Physique IV, Vol. 04, Iss. C6, 1994-06 ,pp. :