High-Tc SQUIDs on Silicon Substrates

Publisher： Edp Sciences

E-ISSN： 1764-7177|06|C3|C3-361-C3-365

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.06, Iss.C3, 1996-04, pp. : C3-361-C3-365

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Application of silicon substrates for high-Tc Josephson junctions and SQUIDs

By  

Le Journal de Physique IV, Vol. 08, Iss. PR3, 1998-06 ,pp. : Pr3-297-Pr3-300

Edp Sciences

Access to resources Recommend Favorite

0.43 THz emission from high-T c superconducting emitters optimized at 77 K

By Minami H   Watanabe C   Kashiwagi T   Yamamoto T   Kadowaki K   Klemm R A  

Journal of Physics: Condensed Matter, Vol. 28, Iss. 2, 2016-01 ,pp. : 25701-25707

IOP Publishing

Access to resources Recommend Favorite

Low-$T_{\rm c}$ ramp-type Josephson junctions for SQUIDS

By  

Le Journal de Physique IV, Vol. 12, Iss. 3, 2002-05 ,pp. : 133-136

Edp Sciences

Access to resources Recommend Favorite

High-T C fully compensated ferrimagnetic semiconductors as spin-filter materials: the case of CrVXAl (X = Ti, Zr, Hf) Heusler compounds

By Galanakis I   Özdoğan K   Şaşıoglu E  

Journal of Physics: Condensed Matter, Vol. 26, Iss. 8, 2014-02 ,pp. : 86003-86007

IOP Publishing

Access to resources Recommend Favorite

Graphoepitaxial high-Tc SQUIDs

By  

Journal of Physics: Conference Series , Vol. 507, Iss. 4, 2014-05 ,pp. : 33-36

IOP Publishing

Access to resources Recommend Favorite