Publisher： Edp Sciences
E-ISSN： 1764-7177|7|C2|C2-863-C2-865
ISSN： 1155-4339
Source： Le Journal de Physique IV, Vol.7, Iss.C2, 1997-04, pp. : C2-863-C2-865
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
EXAFS STUDY ON SiO
Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. :
Access to resources
Recommend
An in-situ TEM study of the effects of 6 keV He ion irradiation on Si and SiO2
Journal of Physics: Conference Series , Vol. 371, Iss. 1, 2012-07 ,pp. :
Access to resources
Potential sputtering on SiO2 and Au induced by highly charged ions impact
Journal of Physics: Conference Series , Vol. 488, Iss. 13, 2014-04 ,pp. :