Related content

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovski L.   Velikovski I.   Veretekha A.   Krasovitski D.   Pavlenko M.   Petrov S.   Pogorel’ski M.   Pogorel’ski Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chaly V.  

Technical Physics Letters, Vol. 32, Iss. 11, 2006-11 ,pp. : 960-963

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

AlGaN/GaN HEMTs grown by ammonia MBE

By Volkov V.   Ivanova V.   Kuz’michev Yu.   Lermontov S.   Solov’ev Yu.   Baranov D.   Kaidash A.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Chalyi V.  

Technical Physics Letters, Vol. 30, Iss. 5, 2004-05 ,pp. : 380-382

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovskii L.   Velikovskii I.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chalyi V.  

Technical Physics Letters, Vol. 31, Iss. 10, 2005-10 ,pp. : 864-867

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLS

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-163-C5-167

Edp Sciences

Access to resources Recommend Favorite

Cracks in GaN/AlN multiple quantum well structures grown by MBE

By  

Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 107-110

IOP Publishing

Access to resources Recommend Favorite