Invited PaperComparison of the freeze-out effect in ln and B doped n-MOSFETs in the range 4.2 – 300 K

Publisher： Edp Sciences

E-ISSN： 1764-7177|08|PR3|Pr3-3-Pr3-8

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.08, Iss.PR3, 1998-06, pp. : Pr3-3-Pr3-8

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