Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

E-ISSN： 1764-7177|09|PR8|Pr8-221-Pr8-228

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.09, Iss.PR8, 1999-09, pp. : Pr8-221-Pr8-228

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