Epitaxial growth of heavily P-doped Si films at 450 °C by alternately supplied PH3 and SiH4

Publisher： Edp Sciences

E-ISSN： 1764-7177|11|PR3|Pr3-255-Pr3-260

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-255-Pr3-260

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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