Frustration and (111) silicon surface

E-ISSN： 0302-0738|44|2|257-261

ISSN： 0302-0738

Source： Journal de Physique, Vol.44, Iss.2, 1983-02, pp. : 257-261

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Drift of adatoms on the (111) silicon surface under electromigration conditions

By Rodyakina E. Kosolobov S. Latyshev A.

JETP Letters, Vol. 94, Iss. 2, 2011-09 ,pp. : 147-151

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Alkylation of Silicon(111) surfaces

Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. : 195-198

Edp Sciences

Access to resources Recommend Favorite

Transport properties of an electron gas on the surface of silicon (111): The importance of a density dependent effective mass

Journal of Physics: Conference Series , Vol. 150, Iss. 2, 2009-02 ,pp. : 57-60

IOP Publishing

Access to resources Recommend Favorite

X-ray photoelectron spectroscopy study of silicon interlayerbased surface passivation for AlGaAs/GaAs quantum structures on(111) B surfaces

Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. : 95-99

Edp Sciences

Access to resources Recommend Favorite

SURFACE MAGNETISM OF THE CLEAN Ni (111) SURFACE AND OF A Ni MONOLAYER ON Cu (111)

Le Journal de Physique Colloques, Vol. 49, Iss. C8, 1988-12 ,pp. : C8-1625-C8-1626

Edp Sciences

Access to resources Recommend Favorite