The determination from electrical measurements of the impurity concentration in the base region of a low frequency germanium transistor.

Publisher： Edp Sciences

E-ISSN： 1160-8161|22|S6|100-102

ISSN： 1160-8161

Source： Journal de Physique Appliqué, Vol.22, Iss.S6, 1961-06, pp. : 100-102

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