The reduction of dislocation density in GaAs by in doping: a specific interaction of in with the cores of 30° partial dislocations

Publisher： Edp Sciences

E-ISSN： 0302-0738|49|7|1219-1224

ISSN： 0302-0738

Source： Journal de Physique, Vol.49, Iss.7, 1988-07, pp. : 1219-1224

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