Publisher: Edp Sciences
E-ISSN: 0302-072x|40|3|53-55
ISSN: 0302-072x
Source: Journal de Physique Lettres, Vol.40, Iss.3, 1979-02, pp. : 53-55
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
NOISE AND DIFFUSION IN p-TYPE SILICON
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
Amorphous silicon on p-type crystalline silicon heterojunction
Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. :
TRANSIENT REGIMES OF HOT CARRIERS IN p-TYPE SILICON
Le Journal de Physique Colloques, Vol. 42, Iss. C7, 1981-10 ,pp. :
On the intrinsic gettering of Cu in p-type silicon
Journal de Physique III, Vol. 1, Iss. 9, 1991-09 ,pp. :
Electronic structure model for n- and p-type silicon quantum dots
Superlattices and Microstructures, Vol. 22, Iss. 4, 1997-12 ,pp. :