Interaction of barrier layers and statistical fluctuations in the three-electrode crystal [transistor].

Publisher: Edp Sciences

E-ISSN: 1160-8161|13|S7-9|112-127

ISSN: 1160-8161

Source: Journal de Physique Appliqué, Vol.13, Iss.S7-9, 1952-07, pp. : 112-127

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