A complete dry etching process for MOS FET's with submicron gate length

Publisher: Edp Sciences

E-ISSN: 0035-1687|17|6|383-388

ISSN: 0035-1687

Source: Revue de Physique Appliquée (Paris), Vol.17, Iss.6, 1982-06, pp. : 383-388

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