Publisher: Edp Sciences
E-ISSN: 0035-1687|13|12|837-840
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.13, Iss.12, 1978-12, pp. : 837-840
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Transmission of low-energy electrons through SiO2 tube
Journal of Physics: Conference Series , Vol. 163, Iss. 1, 2009-04 ,pp. :
Investigation of the interface states in the SiO
Le Journal de Physique IV, Vol. 125, Iss. issue, 2005-06 ,pp. :
PROCESS DEPENDENCE OF HOLE TRAPPING IN NITRIDED SiO
Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. :
Process characterization for LPCVD TEOS-ozone based SiO
Le Journal de Physique IV, Vol. 03, Iss. C3, 1993-08 ,pp. :