Publisher: Edp Sciences
E-ISSN: 0035-1687|15|3|675-677
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.15, Iss.3, 1980-03, pp. : 675-677
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
YAG photoluminescence of GaAs : Cr
Revue de Physique Appliquée (Paris), Vol. 15, Iss. 3, 1980-03 ,pp. :
Photoionization transition Cr3+ → Cr2+ in GaAs : Cr
Revue de Physique Appliquée (Paris), Vol. 15, Iss. 3, 1980-03 ,pp. :
CHARACTERIZATION OF SEMIINSULATING GaAs : Cr BY SCANNING ELECTRON ACOUSTIC MICROSCOPY
Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. :
PHONON SCATTERING BY Cr IONS IN GaAs AND THE EFFECT OF UNIAXIAL STRESS
Le Journal de Physique Colloques, Vol. 42, Iss. C6, 1981-12 ,pp. :
Detailed optical characterization of the deep cr level in gaas
Journal de Physique, Vol. 43, Iss. 5, 1982-05 ,pp. :