Electronic structure of complex defects in silicon : divacancy and split 100 interstitial

Publisher: Edp Sciences

E-ISSN: 0035-1687|15|4|849-852

ISSN: 0035-1687

Source: Revue de Physique Appliquée (Paris), Vol.15, Iss.4, 1980-04, pp. : 849-852

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