Related content

Silicon MOS structures with nonstoichiometric metal-oxide semiconductors

By Tutov E.   Ryabtsev S.   Tutov E.   Bormontov E.  

Technical Physics, Vol. 51, Iss. 12, 2006-12 ,pp. : 1604-1607

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Decay index: a new carotid Doppler waveform measure associated with the Windkessel function of elastic arteries - A sensitive measure of experimental and clinical renovascular resistance

By Nagai Y.   Helwegen J.   Fleg J.L.   Kemper M.K.   Earley C.J.   Rywik T.M.   Wijn P.   Metter E.J.  

Ultrasound in Medicine and Biology, Vol. 25, Iss. 9, 1999-11 ,pp. : 1371-1376

Elsevier

Access to resources Recommend Favorite

The exact finite difference method: A new approach to the calculation of leak modes in multilayer waveguide structures

By Golant E.  

Technical Physics Letters, Vol. 31, Iss. 12, 2005-12 ,pp. : 1074-1077

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of oxygen on the chemical reactions and electron work function in Ba-Si and BaO-Si structures

By Il’chenko V.   Kuznetsov G.  

Technical Physics Letters, Vol. 27, Iss. 4, 2001-04 ,pp. : 333-335

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Difference Posets in the Quantum Structures Background

By Chovanec F.   Kôpka F.  

International Journal of Theoretical Physics, Vol. 39, Iss. 3, 2000-03 ,pp. : 571-583

Springer Publishing Company

Access to resources Recommend Favorite