On the charge-handling capacity of epitaxial and ion-implanted GaAs buried channel charge-coupled devices

E-ISSN： 0035-1687|21|6|349-356

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.21, Iss.6, 1986-06, pp. : 349-356

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

HOT CARRIERS IN REDUCED GEOMETRY SURFACE-CHANNEL CHARGE-COUPLED DEVICES

Le Journal de Physique Colloques, Vol. 42, Iss. C7, 1981-10 ,pp. : C7-183-C7-192

Edp Sciences

Access to resources Recommend Favorite

An approximate two-dimensional transient analysis of charge transport in a buried-channel charge-coupled device

Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. : 683-690

Edp Sciences

Access to resources Recommend Favorite

Evidence for self-interaction of charge distribution in charge-coupled devices

By Guyonnet A. Astier P. Antilogus P. Regnault N. Doherty P.

Astronomy & Astrophysics, Vol. 575, Iss. issue, 2015-02 ,pp. : A41-A41

Edp Sciences

Access to resources Recommend Favorite

Experimental investigation of the effect of high-energy protons on charge-coupled devices

By Ermakov K. Ivanov N. Lobanov O. Pashuk V. Tverskoy M. Lyubinskii S.

Technical Physics Letters, Vol. 36, Iss. 7, 2010-07 ,pp. : 610-612

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Investigation of the frequency characteristics of solid-state layer heterostructures in charge-coupled devices

By Zayarny V.

Technical Physics Letters, Vol. 28, Iss. 2, 2002-02 ,pp. : 96-98

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite