Deformation of a Σ= 9 (122) gb in silicon studied by HREM

Publisher： Edp Sciences

E-ISSN： 0035-1687|23|4|680-680

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.23, Iss.4, 1988-04, pp. : 680-680

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

HREM CHARACTERIZATION OF STRUCTURAL CHANGES IN A DEFORMED Σ = 9 (122) GRAIN BOUNDARY IN SILICON

By  

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-323-C1-328

Edp Sciences

Access to resources Recommend Favorite

GRAIN-BOUNDARY DISLOCATIONS STRUCTURE AND MOVEMENT IN Σ=9 STUDIED BY HREM

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C5, 1988-10 ,pp. : C5-283-C5-288

Edp Sciences

Access to resources Recommend Favorite

Deformation mechanisms of Σ = 9 bicrystals of silicon

By  

Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. : 569-577

Edp Sciences

Access to resources Recommend Favorite

A Comparative Study of the EBIC Contrast and Gettering Efficiency of the Tilt Boundaries Σ= 25, Σ= 13 and Σ= 9 in Silicon Bicrystals

By  

Journal de Physique III, Vol. 5, Iss. 9, 1995-09 ,pp. : 1371-1382

Edp Sciences

Access to resources Recommend Favorite

Atomic structure of boron nitride nanotubes with an armchair-type structure studied by HREM

By Narita I.   Oku T.  

Solid State Communications, Vol. 129, Iss. 7, 2004-02 ,pp. : 415-419

Elsevier

Access to resources Recommend Favorite