Publisher: Edp Sciences
E-ISSN: 0035-1687|23|7|1337-1339
ISSN: 0035-1687
Source: Revue de Physique Appliquée (Paris), Vol.23, Iss.7, 1988-07, pp. : 1337-1339
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL
Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. :
RECOMBINATION MECHANISM AT DISLOCATIONS IN GaAs EBIC CONTRAST STUDY
Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. :
EBIC contrast study of the recombination mechanism at dislocations in GaAs
Journal de Physique III, Vol. 2, Iss. 3, 1992-03 ,pp. :
Minority carrier trap measurements in schottky barriers on N-type LPE GaAs
Revue de Physique Appliquée (Paris), Vol. 12, Iss. 12, 1977-12 ,pp. :