Computer simulation study of the effect of semiconductor deep bulk levels on the capacitance-voltage characteristics of InSb MIS structures

Publisher： Edp Sciences

E-ISSN： 0035-1687|22|9|985-989

ISSN： 0035-1687

Source： Revue de Physique Appliquée (Paris), Vol.22, Iss.9, 1987-09, pp. : 985-989

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