MÖSSBAUER STUDIES ON DAMAGE SITES OF ISOTOPE-SEPARATOR-IMPLANTED IMPURITY ATOMS IN SILICON

Publisher: Edp Sciences

E-ISSN: 0449-1947|37|C6|C6-883-C6-887

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.37, Iss.C6, 1976-12, pp. : C6-883-C6-887

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