A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C4|C4-75-C4-83

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C4, 1983-09, pp. : C4-75-C4-83

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