THE ELECTRONIC STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|42|C4|C4-137-C4-140

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-137-C4-140

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