MOBILITE EFFECTIVE DANS LE CANAL D'INVERSION D'UN TRANSISTOR MOSFET REALISE DANS UNE COUCHE MINCE DE SILICIUM POLYCRISTALLIN

Publisher: Edp Sciences

E-ISSN: 0449-1947|43|C1|C1-369-C1-374

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.43, Iss.C1, 1982-10, pp. : C1-369-C1-374

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