INFRARED ELLIPSOMETRY – A NEW TECHNIQUE FOR CHARACTERIZATION OF DOPANT PARAMETERS IN SILICON

E-ISSN： 0449-1947|44|C10|C10-87-C10-90

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C10, 1983-12, pp. : C10-87-C10-90

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