THE ELECTRONIC STRUCTURE OF HEAVILY DOPED ION IMPLANTED LASER ANNEALED SILICON : ELLIPSOMETRIC MEASUREMENTS

Publisher： Edp Sciences

E-ISSN： 0449-1947|44|C5|C5-203-C5-208

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.44, Iss.C5, 1983-10, pp. : C5-203-C5-208

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