INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H

Publisher： Edp Sciences

E-ISSN： 0449-1947|42|C4|C4-799-C4-801

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-799-C4-801

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Ohmic contacts on sputtered a-Si : H

By  

Journal de Physique Lettres, Vol. 41, Iss. 2, 1980-01 ,pp. : 27-29

Edp Sciences

Access to resources Recommend Favorite

Effect of substrate temperature and deposition rate on the photoconductivity of sputtered a-Si : H

By  

Journal de Physique Lettres, Vol. 41, Iss. 20, 1980-10 ,pp. : 483-486

Edp Sciences

Access to resources Recommend Favorite

DENSITY OF STATES STUDY IN SPUTTERED a-Si : H : EFFECT OF IMPURITIES AND H RELATED DEFECTS

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-455-C4-458

Edp Sciences

Access to resources Recommend Favorite

INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm-1 IR ABSORPTION BAND

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-679-C4-682

Edp Sciences

Access to resources Recommend Favorite

ELECTRON DRIFT MOBILITY MEASUREMENT IN UNDOPED TRIODE DC SPUTTERED a-Si : H

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-163-C4-166

Edp Sciences

Access to resources Recommend Favorite