ELECTRONIC PROPERTIES AT ABRUPT METAL-Si (III) INTERFACES

Publisher： Edp Sciences

E-ISSN： 0449-1947|45|C5|C5-419-C5-425

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.45, Iss.C5, 1984-04, pp. : C5-419-C5-425

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Electronic properties of metal/MgO(001) interfaces

By  

Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. : 63-67

Edp Sciences

Access to resources Recommend Favorite

Atomistic study of the structural and electronic properties of a-Si:H/c-Si interfaces

By Santos Iván   Cazzaniga Marco   Onida Giovanni   Colombo Luciano  

Journal of Physics: Condensed Matter, Vol. 26, Iss. 9, 2014-03 ,pp. : 95001-95008

IOP Publishing

Access to resources Recommend Favorite

METAL-SEMICONDUCTOR (Si, GaAs) INTERFACES

By  

Le Journal de Physique Colloques, Vol. 50, Iss. C8, 1989-11 ,pp. : C8-449-C8-451

Edp Sciences

Access to resources Recommend Favorite

Electronic properties and Schottky barriers at ZnO–metal interfaces from first principles

By  

Journal of Physics: Condensed Matter, Vol. 27, Iss. 1, 2015-01 ,pp. : 15006-15018

IOP Publishing

Access to resources Recommend Favorite

Energetic, structural and electronic properties of metal vacancies in strained AlN/GaN interfaces

By Kioseoglou J   Pontikis V   Komninou Ph   Pavloudis Th   Chen J   Karakostas Th  

Journal of Physics: Condensed Matter, Vol. 27, Iss. 12, 2015-04 ,pp. : 125006-125012

IOP Publishing

Access to resources Recommend Favorite