THE USE OF LOW PRESSURE IN THE EPITAXIAL GROWTH OF Si, GaAs, GaAlAs, InP, GaInAs, GaInAsP AND InAlAs

Publisher: Edp Sciences

E-ISSN: 0449-1947|43|C5|C5-87-C5-92

ISSN: 0449-1947

Source: Le Journal de Physique Colloques, Vol.43, Iss.C5, 1982-12, pp. : C5-87-C5-92

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