Publisher: Edp Sciences
E-ISSN: 0449-1947|42|C4|C4-815-C4-818
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-815-C4-818
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
EXAFS STUDY OF c-Si, a-Si AND a-Si : H
Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. :
THEORETICAL ANALYSES OF a-Si : H DIODE CHARACTERISTICS
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
Thickness dependence of hydrogen in a-Si : H films deposited on c-Si
Journal de Physique Lettres, Vol. 42, Iss. 15, 1981-08 ,pp. :
ELECTROREFLECTANCE STUDY OF ELECTRONIC STRUCTURE IN a-Si : H
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :
ELECTRONIC PROPERTIES OF a-Si : H FROM MEASUREMENTS ON DEVICES
Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. :