HOT ELECTRON NOISE PROPERTIES OF SEMICONDUCTORS IN THE NON-ZERO COLLISION DURATION REGIME

E-ISSN： 0449-1947|42|C7|C7-227-C7-234

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C7, 1981-10, pp. : C7-227-C7-234

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Transverse hot-electron effects in semiconductors

By Kachlishvili Z. Chumburidze F.

Technical Physics Letters, Vol. 24, Iss. 6, 1998-06 ,pp. : 470-471

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Coherent information of one-mode Gaussian channels—the general case of non-zero added classical noise

Journal of Physics A: Mathematical and Theoretical, Vol. 48, Iss. 12, 2015-03 ,pp. : 125301-125315

IOP Publishing

Access to resources Recommend Favorite

HOT ELECTRON POPULATION INVERSION AND BULK NDC IN SEMICONDUCTORS

Le Journal de Physique Colloques, Vol. 42, Iss. C7, 1981-10 ,pp. : C7-413-C7-420

Edp Sciences

Access to resources Recommend Favorite

Equation of State in Non-Zero Magnetic Field

Journal of Physics: Conference Series , Vol. 668, Iss. 1, 2016-01 ,pp. : 545-546

IOP Publishing

Access to resources Recommend Favorite

QUANTUM THEORY OF HOT ELECTRON-PHONON TRANSPORT IN INHOMOGENEOUS SEMICONDUCTORS

Le Journal de Physique Colloques, Vol. 42, Iss. C7, 1981-10 ,pp. : C7-293-C7-300

Edp Sciences

Access to resources Recommend Favorite