STRUCTURAL MODEL OF FLUORINATED AMORPHOUS-SILICON (a-Si : F)

Publisher： Edp Sciences

E-ISSN： 0449-1947|42|C4|C4-209-C4-212

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.42, Iss.C4, 1981-10, pp. : C4-209-C4-212

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

AMORPHOUS HYDROGENATED ALLOYS : A COMPARATIVE EXAFS STUDY OF a-Si1-xCx : H, a-Si1- xGex : H, a-SiNx : H AT THE SILICON K-EDGE

By  

Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. : C8-357-C8-361

Edp Sciences

Access to resources Recommend Favorite

VIBRATIONAL EXCITATIONS IN a-Si : F AND a-Si : F : H ALLOYS

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C6, 1981-12 ,pp. : C6-93-C6-95

Edp Sciences

Access to resources Recommend Favorite

LARGE-AREA DEPOSITION OF AMORPHOUS-SILICON

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-671-C4-674

Edp Sciences

Access to resources Recommend Favorite

STRUCTURAL PROPERTIES OF a-Si AND a-Si : H BY EXAFS

By  

Le Journal de Physique Colloques, Vol. 47, Iss. C8, 1986-12 ,pp. : C8-375-C8-377

Edp Sciences

Access to resources Recommend Favorite

CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS

By  

Le Journal de Physique Colloques, Vol. 42, Iss. C4, 1981-10 ,pp. : C4-519-C4-522

Edp Sciences

Access to resources Recommend Favorite