DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE

Publisher： Edp Sciences

E-ISSN： 0449-1947|49|C4|C4-457-C4-460

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-457-C4-460

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