COMPUTATION OF STRUCTURE AND ENERGY OF THE Σ3 (21(-1)) TILT BOUNDARY IN SILICON

Publisher： Edp Sciences

E-ISSN： 0449-1947|51|C1|C1-103-C1-108

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.51, Iss.C1, 1990-01, pp. : C1-103-C1-108

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Structure and mechanical properties of a Σ= 51 [011] tilt boundary in germanium

By  

Revue de Physique Appliquée (Paris), Vol. 23, Iss. 4, 1988-04 ,pp. : 681-681

Edp Sciences

Access to resources Recommend Favorite

INCOHERENT Σ3 GRAIN BOUNDARIES IN F.C.C. METALS : THE INFLUENCE OF INCLINATION ON THE BOUNDARY STRUCTURE AND ENERGY

By  

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-359-C1-366

Edp Sciences

Access to resources Recommend Favorite

ON THE ELECTRICAL ACTIVITY OF THE ((-1)11)-(1(-1)2) STEPS IN THE SILICON Σ = 3 TWIN BOUNDARY

By  

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-581-C1-586

Edp Sciences

Access to resources Recommend Favorite

A Comparative Study of the EBIC Contrast and Gettering Efficiency of the Tilt Boundaries Σ= 25, Σ= 13 and Σ= 9 in Silicon Bicrystals

By  

Journal de Physique III, Vol. 5, Iss. 9, 1995-09 ,pp. : 1371-1382

Edp Sciences

Access to resources Recommend Favorite

STRAIN-INDUCED BOUNDARY MIGRATION (SIBM) IN ALUMINUM BICRYSTALS EACH WITH A <211> TILT BOUNDARY

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C5, 1988-10 ,pp. : C5-605-C5-610

Edp Sciences

Access to resources Recommend Favorite