THE STRUCTURAL ENVIRONMENT OF Te DOPANTS IN GaAs USING EXAFS IN FLUORESCENCE MODE

Publisher： Edp Sciences

E-ISSN： 0449-1947|47|C8|C8-901-C8-904

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.47, Iss.C8, 1986-12, pp. : C8-901-C8-904

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