Publisher： Edp Sciences
E-ISSN： 0449-1947|51|C1|C1-417-C1-422
ISSN： 0449-1947
Source： Le Journal de Physique Colloques, Vol.51, Iss.C1, 1990-01, pp. : C1-417-C1-422
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Czochralski growth of silicon bicrystals
Revue de Physique Appliquée (Paris), Vol. 22, Iss. 7, 1987-07 ,pp. :
Access to resources
Recommend
TEM INVESTIGATION OF COPPER PRECIPITATION AT GRAIN BOUNDARIES IN SILICON
Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. :
EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS
Le Journal de Physique Colloques, Vol. 50, Iss. C6, 1989-06 ,pp. :
INTERGRANULAR SEGREGATION OF BISMUTH IN COPPER BICRYSTALS
Le Journal de Physique Colloques, Vol. 46, Iss. C4, 1985-04 ,pp. :
ELECTRICAL PROPERTIES OF COBALT DOPED SILICON BICRYSTALS
Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. :