IMPURITIES IN GaAlAs-GaAs HETEROJUNCTIONS METASTABLE CHARACTER OF Si STATES AND MAGNETODONORS

E-ISSN： 0449-1947|48|C5|C5-243-C5-246

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.48, Iss.C5, 1987-11, pp. : C5-243-C5-246

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

ELECTROREFLECTANCE AND SPECTROSCOPIC ELLIPSOMETRY STUDIES OF GaAs/GaAlAs HETEROJUNCTIONS

Le Journal de Physique Colloques, Vol. 44, Iss. C10, 1983-12 ,pp. : C10-229-C10-233

Edp Sciences

Access to resources Recommend Favorite

AN X-RAY DIFFRACTION STUDY OF DISORDER IN GaAlAs-GaAs SUPERLATTICES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-105-C5-108

Edp Sciences

Access to resources Recommend Favorite

Modèle analytique compact d'une hétérojonction isotype GaAlAs/GaAs

Revue de Physique Appliquée (Paris), Vol. 17, Iss. 8, 1982-08 ,pp. : 453-464

Edp Sciences

Access to resources Recommend Favorite

Binding energies of impurity states in strained wurtzite GaN/Al_xGa_1−xN heterojunctions with finitely thick potential barriers

By Zhen-Yu Feng Shi-Liang Ban Jun Zhu

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 66801-66806

IOP Publishing

Access to resources Recommend Favorite

POSITION AND CHARACTER (Ɖ OR X) OF ENERGY STATES IN SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATTICES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-495-C5-498

Edp Sciences

Access to resources Recommend Favorite