ON THE MOBILITY OF GaAs-AlGaAs HETEROSTRUCTURES WITH AN IMPURITY LAYER IN THE GaAs

E-ISSN： 0449-1947|48|C5|C5-255-C5-258

ISSN： 0449-1947

Source： Le Journal de Physique Colloques, Vol.48, Iss.C5, 1987-11, pp. : C5-255-C5-258

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