Publisher: Edp Sciences
E-ISSN: 0449-1947|49|C4|C4-693-C4-696
ISSN: 0449-1947
Source: Le Journal de Physique Colloques, Vol.49, Iss.C4, 1988-09, pp. : C4-693-C4-696
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Residual impurities in MO-VPE GaAs epitaxial layers
Revue de Physique Appliquée (Paris), Vol. 19, Iss. 1, 1984-01 ,pp. :
By Valyaev V. Gurtovoi V. Ivanov D. Morozov S. Sirotkin V. Dubrovskii Yu. Shapoval S. Khanin Yu. Vdovin E. Pustovit A.
Journal of Experimental and Theoretical Physics, Vol. 86, Iss. 2, 1998-02 ,pp. :
Study of melt-grown GaAsN and InGaAsN epitaxial layers
Journal of Physics: Conference Series , Vol. 253, Iss. 1, 2010-11 ,pp. :