Source‐gating effect in hydrothermally grown ZnO nanowire transistors

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|213|9|2438-2445

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.213, Iss.9, 2016-09, pp. : 2438-2445

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Substrate effect of hydrothermally grown ZnO nanorods and its luminescence properties

By Das Siddhant K  

Journal of Experimental Nanoscience, Vol. 8, Iss. 3, 2013-04 ,pp. : 382-388

Taylor & Francis Ltd

Access to resources Recommend Favorite

A two-step hydrothermally grown ZnO microtube array for CO gas sensing

By Wang J.X.   Sun X.W.   Huang H.   Lee Y.C.   Tan O.K.   Yu M.B.   Lo G.Q.   Kwong D.L.  

Applied Physics A, Vol. 88, Iss. 4, 2007-09 ,pp. : 611-615

Springer Publishing Company

Access to resources Recommend Favorite

FTIR and UV-Visible Absorbance Studies of Hydrothermally Grown ZnO Coated with Polyvinylpyrrolidone

By  

Materials Science Forum, Vol. 2017, Iss. 895, 2017-05 ,pp. : 73-78

Trans Tech Publications

Access to resources Recommend Favorite

Virus‐Templated Synthesis of ZnO Nanostructures and Formation of Field‐Effect Transistors

By  

ADVANCED MATERIALS, Vol. 23, Iss. 42, 2011-11 ,pp. : 4918-4922

John Wiley & Sons Inc

Access to resources Recommend Favorite

Contact barriers in a single ZnO nanowire device

By Kim Kanghyun  

Applied Physics A, Vol. 94, Iss. 2, 2009-02 ,pp. : 253-256

Springer Publishing Company

Access to resources Recommend Favorite