Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO₂/TiSi₂ 18 nm PMOS

E-ISSN： 2261-236x|78|issue|01019-01019

ISSN： 2261-236x

Source： MATEC Web of conference, Vol.78, Iss.issue, 2016-10, pp. : 01019-01019

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The characteristic parameters of initiating defects in HfO₂/SiO₂ high-reflector multilayer thin film at wavelength of 1064 nm*

By Li Xiao Li Baohe Shao Jianda

EPJ Applied Physics (The), Vol. 67, Iss. 3, 2014-08 ,pp. : 30301-30301

Edp Sciences

Access to resources Recommend Favorite

Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

MATEC Web of conference, Vol. 78, Iss. issue, 2016-10 ,pp. : 01017-01017

Edp Sciences

Access to resources Recommend Favorite

XPS and cathodoluminescence studies of HfO₂, Sc₂O₃ and (HfO₂)1-x(Sc₂O₃)_x films

By Kaichev Vasily V. Ivanova Ekaterina V. Zamoryanskaya Maria V. Smirnova Tamara P. Yakovkina Lubov V. Gritsenko Vladimir A.

EPJ Applied Physics (The), Vol. 64, Iss. 1, 2013-10 ,pp. : 10302-10302

Edp Sciences

Access to resources Recommend Favorite

Passivation of HfO₂/Ge interface with YON fabricated by different approaches

MATEC Web of conference, Vol. 104, Iss. issue, 2017-04 ,pp. : 01006-01006

Edp Sciences

Access to resources Recommend Favorite

Influence of CaF₂ on the apparent viscosity of CaO-SiO₂-MgO-Al₂O₃-TiO₂ slags

By Lin Yin-he Zhang Li-qiang Huang Xiao-li

Metallurgical Research & Technology (formerly Revue de Métallurgie), Vol. 114, Iss. 6, 2017-09 ,pp. : 606-606

Edp Sciences

Access to resources Recommend Favorite