Gate voltage effects in capacitively coupled quantum dots

E-ISSN： 1286-4854|76|1|95-101

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.76, Iss.1, 2006-10, pp. : 95-101

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Macroscopic quantum effects in capacitively- and inductively-coupled intrinsic Josephson junctions

Journal of Physics: Conference Series , Vol. 150, Iss. 5, 2009-03 ,pp. : 502-505

IOP Publishing

Access to resources Recommend Favorite

Feasibility study of the quantum XOR gate based on coupled asymmetric semiconductor quantum dots

By Balandin A. Wang K.L.

Superlattices and Microstructures, Vol. 25, Iss. 3, 1999-03 ,pp. : 509-518

Academic Press

Access to resources Recommend Favorite

Excitons in coupled quantum dots

By Xu X. Feng Y.P.

Journal of Physics and Chemistry of Solids, Vol. 64, Iss. 11, 2003-11 ,pp. : 2301-2306

Elsevier

Access to resources Recommend Favorite

Quantum localized modes in capacitively coupled Josephson junctions

EPL (EUROPHYSICS LETTERS), Vol. 79, Iss. 6, 2007-09 ,pp. : 66002-66002

Edp Sciences

Access to resources Recommend Favorite

Band structures of laterally coupled quantum dots, accounting for electromechanical effects

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 56-59

IOP Publishing

Access to resources Recommend Favorite