Infrared photocarrier radiometry with dc sub-bandgap optical bias: Sensitivity enhancement in the detection of deep subsurface electronic defects in Si wafers

Publisher： Edp Sciences

E-ISSN： 1764-7177|125|issue|557-559

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.125, Iss.issue, 2005-06, pp. : 557-559

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