Surface reactivity of InSb studied by cyclic voltammetrycoupled to XPS

Publisher： Edp Sciences

E-ISSN： 1764-7177|132|issue|147-151

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.132, Iss.issue, 2006-03, pp. : 147-151

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Effect of surface composition on melting of thin InSb films

By Gulyaev Yu.   Veselov A.   Veselov A.   Burylin E.   Dzhumaliev A.   Zyuryukin Yu.   Kiryasova O.   Ryabushkin S.  

Technical Physics, Vol. 49, Iss. 8, 2004-08 ,pp. : 1068-1070

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A surface-gated InSb quantum well single electron transistor

By  

New Journal of Physics, Vol. 9, Iss. 8, 2007-08 ,pp. : 227-233

IOP Publishing

Access to resources Recommend Favorite

Properties of the semiconductor InSb.

By  

Journal de Physique et le Radium, Vol. 19, Iss. 2, 1958-02 ,pp. : 140-150

Edp Sciences

Access to resources Recommend Favorite

Modeling of Terahertz Radiation from InSb and InAs

By Liu Dong-feng   Tan Yi-Zhi  

International Journal of Infrared and Millimeter Waves, Vol. 26, Iss. 9, 2005-09 ,pp. : 1265-1275

Springer Publishing Company

Access to resources Recommend Favorite

X-ray photoemission studies on InSb clusters

By Sekhar B.R.   Rundhe M.   Besson D.   Treilleux M.   Hoareau H.  

Surface Science, Vol. 549, Iss. 2, 2004-01 ,pp. : 165-171

Elsevier

Access to resources Recommend Favorite