Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

Author： Chakraborty S.   Cariou R.   Labrune M.   Roca i Cabarrocas P.   Chatterjee P.  

Publisher： Edp Sciences

E-ISSN： 2105-0716|4|issue|45103-45103

ISSN： 2105-0716

Source： EPJ Photovoltaics, Vol.4, Iss.issue, 2013-04, pp. : 45103-45103

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