Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

Publisher： Edp Sciences

E-ISSN： 2261-236x|67|issue|02002-02002

ISSN： 2261-236x

Source： MATEC Web of conference, Vol.67, Iss.issue, 2016-07, pp. : 02002-02002

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